Invention Grant
- Patent Title: Method of making high purity polycrystalline aluminum oxynitride bodies useful in semiconductor process chambers
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Application No.: US14521679Application Date: 2014-10-23
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Publication No.: US09637415B2Publication Date: 2017-05-02
- Inventor: Suri A. Sastri , Sreeram Balasubramanian , Lee M. Goldman
- Applicant: Surmet, Corp.
- Applicant Address: US MA Burlington
- Assignee: SURMET CORPORATION
- Current Assignee: SURMET CORPORATION
- Current Assignee Address: US MA Burlington
- Main IPC: C01B21/082
- IPC: C01B21/082 ; C04B35/581 ; C04B35/58 ; C04B35/626 ; C04B35/645 ; C04B35/64 ; C04B41/00

Abstract:
A method of making high purity crystalline AlON bodies by synthesizing and calcining AlON powders having less than 80 ppm Si, Mg, Ca, Na, and K impurities. The AlON powders are milled to reduce the particle size of the AlON powders using a high purity milling media. An AlON body is formed from the milled AlON powders. Such AlON bodies are particularly suitable for semiconductor process chamber components.
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