Invention Grant
- Patent Title: Electrically programmable fuse structure and fabrication method thereof
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Application No.: US14965674Application Date: 2015-12-10
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Publication No.: US09637834B2Publication Date: 2017-05-02
- Inventor: Zhenghao Gan
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201510006081 20150106
- Main IPC: H01L23/525
- IPC: H01L23/525 ; C25D5/00 ; H01H85/046 ; H01H85/10 ; H01H85/02
Abstract:
A method for fabricating an electrically programmable fuse structure is provided. The method includes providing a substrate. The method also includes forming an anode and a cathode on the substrate. Further, the method includes forming a fuse between the anode and the cathode and having an anode-connecting-end connecting with the anode and a cathode-connecting-end connecting with the cathode over the substrate. Further, the method also includes forming a compressive stress region in the cathode-connecting-end, wherein the anode-connecting-end has a tensile stress region.
Public/Granted literature
- US20160196946A1 ELECTRICALLY PROGRAMMABLE FUSE STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2016-07-07
Information query
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