Device for selecting a level for at least one read voltage for reading data stored in a multi-level memory device. The multi-level memory device includes a plurality of memory blocks, in which each of the memory blocks includes a plurality of word lines, each of the word lines being allocated to a plurality of memory pages and being indexed by a word line index. The device includes a first mapping unit for mapping each of the word line indices to one bin label, in which the number of bin labels is smaller than the number of word lines, and a second mapping unit for mapping each of the bin labels to a voltage information being indicative for at least one read voltage, in which the level for the at least one read voltage for reading data is selectable for each word line based on the respective word line index.