Invention Grant
- Patent Title: Stacked memory device and system
-
Application No.: US15185197Application Date: 2016-06-17
-
Publication No.: US09640235B2Publication Date: 2017-05-02
- Inventor: Dong Uk Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2015-0000579 20150105
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C7/22 ; G11C5/04 ; G11C29/02 ; G11C29/12 ; G11C29/40 ; G11C8/18 ; H01L25/065 ; G11C29/32 ; G11C29/44

Abstract:
A stack memory device may include a core chip and a base chip. The core chip may include a data receiver, a strobe signal generation unit, and a test register. The data receiver may be configured for receiving data outputted from the core chip through a first normal port. The strobe signal generation unit may be configured to generate a data strobe signal based on one of a normal strobe signal and a test strobe signal depending on an operation mode. The test register may store data outputted from the data receiver in response to the data strobe signal.
Public/Granted literature
- US20160300603A1 STACKED MEMORY DEVICE AND SYSTEM Public/Granted day:2016-10-13
Information query