Invention Grant
- Patent Title: Memory devices with a connecting region having a band gap lower than a band gap of a body region
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Application No.: US14320174Application Date: 2014-06-30
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Publication No.: US09640260B2Publication Date: 2017-05-02
- Inventor: Haitao Liu , Jian Li , Chandra Mouli
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; G11C16/04 ; H01L27/1158 ; H01L27/11582 ; H01L29/792 ; G11C16/10
Abstract:
Memory devices are shown that include a body region and a connecting region that is formed from a semiconductor with a lower band gap than the body region. Connecting region configurations can provide increased gate induced drain leakage during an erase operation. Configurations shown can provide a reliable bias to a body region for memory operations such as erasing, and containment of charge in the body region during a boost operation.
Public/Granted literature
- US20140313833A1 MEMORY DEVICES WITH A CONNECTING REGION HAVING A BAND GAP LOWER THAN A BAND GAP OF A BODY REGION Public/Granted day:2014-10-23
Information query
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