According to one embodiment, the semiconductor memory device includes a first memory cell and a word line. The first memory cell is capable of storing two or more bits of data. The word line is coupled with the first memory cell. a write operation repeat a program loop. The program loop includes a program operation and a verification operation. A program voltage is applied to the word line in the program operation. The write operation includes a first program loop and a second program loop subsequent to the first program loop. Program voltage is applied a first number of times in the first program loop. Program voltage is applied a second number of times in the second program loop. The second number of times is larger than the first number of times.