A semiconductor memory device according to an embodiment comprises: a memory cell array, the memory cell array including a memory block, the memory block including a memory cell, the memory cell including a semiconductor layer, a conductive layer, and a charge accumulation layer, the charge accumulation layer being disposed between the semiconductor layer and the conductive layer; and a control circuit that executes an access operation on the memory cell, the control circuit, triggered by the access operation, detecting a leak current of the conductive layer, and when the leak current is a certain value or more, executing a faulty memory block processing that registers as an access-prohibited region the memory block including the conductive layer.