Invention Grant
- Patent Title: Method of manufacturing a semiconductor device having a rear-side insert structure
-
Application No.: US15188472Application Date: 2016-06-21
-
Publication No.: US09640401B2Publication Date: 2017-05-02
- Inventor: Johannes Georg Laven , Hans-Joachim Schulze , Anton Mauder , Erich Griebl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/739 ; H01L21/265 ; H01L21/02 ; H01L21/225 ; H01L21/306 ; H01L21/324 ; H01L29/04 ; H01L29/06 ; H01L29/10 ; H01L29/16 ; H01L29/36 ; H01L29/66 ; H01L23/544 ; H01L21/683 ; H01L29/861 ; H01L21/3065
Abstract:
A method of manufacturing a semiconductor device includes forming a cavity in a first semiconductor layer formed on a semiconducting base layer, the cavity extending from a process surface of the first semiconductor layer at least down to the base layer, forming a recessed mask liner on a portion of a sidewall of the cavity distant to the process surface or a mask plug in a portion of the cavity distant to the process surface, and growing a second semiconductor layer on the process surface by epitaxy, the second semiconductor layer spanning the cavity.
Public/Granted literature
- US20160300719A1 Method of Manufacturing a Semiconductor Device Having a Rear-Side Insert Structure Public/Granted day:2016-10-13
Information query
IPC分类:
