Invention Grant
- Patent Title: Fast-gas switching for etching
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Application No.: US15048721Application Date: 2016-02-19
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Publication No.: US09640408B2Publication Date: 2017-05-02
- Inventor: Saravanapriyan Sriraman , Alexander Paterson
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/67 ; H01J37/32 ; H01L21/3213
Abstract:
A method for etching a layer in a plasma chamber with an inner injection zone gas feed and an outer injection zone gas feed is provided. The layer is placed in the plasma chamber. A pulsed etch gas is provided from the inner injection zone gas feed at a first frequency, wherein flow of pulsed etch gas from the inner injection zone gas feed is ramped down to zero. The pulsed etch gas is provided from the outer injection zone gas feed at the first frequency and simultaneous with and out of phase with the pulsed etch gas from the inner injection zone gas feed. The etch gas is formed into a plasma to etch the layer, simultaneous with the providing the pulsed etch gas from the inner injection zone gas feed and providing the pulsed gas from the outer interjection zone gas feed.
Public/Granted literature
- US20160172206A1 FAST-GAS SWITCHING FOR ETCHING Public/Granted day:2016-06-16
Information query
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