Invention Grant
- Patent Title: Self-aligned repairing process for barrier layer
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Application No.: US15077761Application Date: 2016-03-22
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Publication No.: US09640428B2Publication Date: 2017-05-02
- Inventor: Chih-Chien Chi , Chung-Chi Ko , Mei-Ling Chen , Huang-Yi Huang , Szu-Ping Tung , Ching-Hua Hsieh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/528 ; H01L23/532
Abstract:
A self-aligned repairing process for a barrier layer is provided. A repair layer is formed by chemical vapor deposition using an organometallic compound as a precursor gas. The precursor gas adsorbed on a dielectric layer exposed by defects in a barrier layer is transformed to an insulating metal oxide layer, and the precursor gas adsorbed on the barrier layer is transformed to a metal layer.
Public/Granted literature
- US20160204060A1 SELF-ALIGNED REPAIRING PROCESS FOR BARRIER LAYER Public/Granted day:2016-07-14
Information query
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