Invention Grant
- Patent Title: Method of fabricating semiconductor device
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Application No.: US15053404Application Date: 2016-02-25
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Publication No.: US09640429B2Publication Date: 2017-05-02
- Inventor: Masahiro Nishi
- Applicant: Sumitomo Electric Device Innovations, Inc.
- Applicant Address: JP Yokohama-shi
- Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee Address: JP Yokohama-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Laura G. Remus
- Priority: JP2012-237440 20121029; JP2012-237446 20121029
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532 ; H01L21/285 ; H01L29/66 ; H01L29/20
Abstract:
A method of fabricating a semiconductor device includes: forming a metal layer containing Al; forming an insulating film on the metal layer; forming an opening pattern to the insulating film, the metal layer being exposed in the opening pattern; and forming a wiring layer in the opening pattern, a first portion being disposed between an edge of the wiring layer and an edge of the opening pattern, a width of the first portion being 1 μm or less, and the metal layer being exposed in the first portion.
Public/Granted literature
- US20160172233A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2016-06-16
Information query
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