Invention Grant
- Patent Title: Film forming method, film forming apparatus, and storage medium
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Application No.: US15080916Application Date: 2016-03-25
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Publication No.: US09640448B2Publication Date: 2017-05-02
- Inventor: Hiroaki Ikegawa , Hiromi Shima , Yusuke Tachino
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2015-067128 20150327
- Main IPC: H01L21/66
- IPC: H01L21/66 ; C23C16/455 ; C23C16/52 ; C23C16/40 ; C23C16/44 ; H01L21/67 ; H01L21/02
Abstract:
A film forming apparatus, which forms a thin film formed of a metal oxide on a substrate by alternately supplying a raw material gas formed of an organic material containing a metal and an oxidation gas for oxidizing the organic material to the substrate a plurality of times, within a reaction vessel under a vacuum atmosphere, is provided. A control part outputs a control signal for comparing a moisture concentration detected by a moisture detection part with a set value after initiation of a step of supplying the oxidation gas and before starting a step of supplying the raw material gas, and when the moisture concentration exceeds a set value, for increasing a substitution operation of an atmosphere substitution step.
Public/Granted literature
- US20160284613A1 Film Forming Method, Film Forming Apparatus, and Storage Medium Public/Granted day:2016-09-29
Information query
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