Invention Grant
- Patent Title: Bridging DMB structure for wire bonding in a power semiconductor module
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Application No.: US15224588Application Date: 2016-07-31
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Publication No.: US09640461B1Publication Date: 2017-05-02
- Inventor: Thomas Spann , Ira Balaj-Loos
- Applicant: IXYS Corporation
- Applicant Address: US CA Milpitas
- Assignee: IXYS Corporation
- Current Assignee: IXYS Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Imperium Patent Works
- Agent T. Lester Wallace; Darien K. Wallace
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L23/00 ; H01L25/07

Abstract:
A power module includes a substrate DMB (Direct Metal Bonded). A novel bridging DMB is surface mounted to the substrate DMB along with power semiconductor device dice. The top metal layer of the bridging DMB has one or more islands to which bonding wires can connect. In one example, an electrical path extends from a module terminal, through a first bonding wire and to a first location on a strip-shaped island, through the island to a second location, and from the second location and through a second bonding wire. The strip-shaped island of the bridging DMB serves as a section of the overall electrical path. Another bonding wire of a separate electrical path passes transversely over the strip-shaped island without any wire crossing any other wire. Use of the bridging DMB promotes bonding wire mechanical strength as well as heat sinking from bonding wires down to the substrate DMB.
Public/Granted literature
- US20170125322A1 Bridging DMB Structure for Wire Bonding in a Power Semiconductor Module Public/Granted day:2017-05-04
Information query
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