Invention Grant
- Patent Title: Semiconductor device having wiring pad and wiring formed on the same wiring layer
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Application No.: US13683085Application Date: 2012-11-21
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Publication No.: US09640462B2Publication Date: 2017-05-02
- Inventor: Shoji Wada
- Applicant: Longitude Semiconductor S.A.R.L.
- Applicant Address: LU Luxembourg
- Assignee: Longitude Semiconductor S.A.R.L.
- Current Assignee: Longitude Semiconductor S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Priority: JP2011-256565 20111124; JP2012-253815 20121120
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00
Abstract:
Disclosed herein is a device that includes a first wiring provided as a first-level wiring layer and elongated in a first direction; and a first wiring pad provided as the first-level wiring layer, the first wiring pad being rectangular and including a first side edge that is elongated in the first direction and a second side edge that is elongated in a second direction crossing to the first direction, the first side edge being greater in length than the second side edge, the first wiring pad being greater in length in the second direction than the first wiring.
Public/Granted literature
- US20130134584A1 SEMICONDUCTOR DEVICE HAVING WIRING PAD AND WIRING FORMED ON THE SAME WIRING LAYER Public/Granted day:2013-05-30
Information query
IPC分类:
