A method of producing a semiconductor package includes planarizing a surface extending from at least part of connection regions to a pair of terminals by disposing a semiconductor element and a capacitor element such that the semiconductor element and the capacitor element do not overlap each other in plan view of the semiconductor element, and by filling a portion between the semiconductor element and the capacitor element with an insulator layer; directly connecting part of the connection regions and one of the pair of terminals to a first metal layer by forming the first metal layer on top of the connection regions, on top of the pair of terminals, and on top of the insulator layer; forming a dielectric layer on top of the first metal layer; and forming a capacitor layer by forming a second metal layer on top of the dielectric layer.