Invention Grant
- Patent Title: Seal ring structure with capacitor
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Application No.: US14320725Application Date: 2014-07-01
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Publication No.: US09640489B2Publication Date: 2017-05-02
- Inventor: Cheng-Chou Hung , Tung-Hsing Lee , Yu-Hua Huang , Ming-Tzong Yang
- Applicant: MediaTek Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/00 ; H01L23/58 ; H01L29/94 ; H01L27/08

Abstract:
A semiconductor device includes a semiconductor substrate of a first conductivity type having a chip region enclosed by a seal ring region. An insulating layer is on the semiconductor substrate. A seal ring structure is embedded in the insulating layer corresponding to the seal ring region. And, a plurality of doping regions are located beneath the first seal ring structure.
Public/Granted literature
- US20140312470A1 SEAL RING STRUCTURE WITH CAPACITOR Public/Granted day:2014-10-23
Information query
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