Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14857549Application Date: 2015-09-17
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Publication No.: US09640496B2Publication Date: 2017-05-02
- Inventor: Wei-Yu Chen , Hsien-Wei Chen , An-Jhih Su , Cheng-Hsien Hsieh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King; Kay Yang
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor device includes a semiconductor substrate, and a redistribution layer (RDL) over the semiconductor substrate and configured to receive a bump. The semiconductor device further includes a polymeric material over the RDL, and the polymeric material includes an opening to expose a portion of the RDL. In the semiconductor device, a barrier is covering a joint between the polymeric material and the RDL.
Public/Granted literature
- US20170084556A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-03-23
Information query
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