Invention Grant
- Patent Title: Terminal structure and semiconductor device
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Application No.: US13960173Application Date: 2013-08-06
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Publication No.: US09640500B2Publication Date: 2017-05-02
- Inventor: Kenichi Yoshida , Makoto Orikasa , Hideyuki Seike , Yuhei Horikawa , Hisayuki Abe
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2012-185043 20120824; JP2013-090419 20130423
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
The present invention relates to a terminal structure comprising; a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, the under-bump metal layer has a convex shape toward the bump, and the thickness Tu0 of the under-bump metal layer at a center of the opening is equal to or greater than the thickness Tu1 of the under-bump metal layer at an end portion of the opening.
Public/Granted literature
- US20140054767A1 TERMINAL STRUCTURE AND SEMICONDUCTOR DEVICE Public/Granted day:2014-02-27
Information query
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