Invention Grant
- Patent Title: Wafer bonding using boron and nitrogen based bonding stack
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Application No.: US15084004Application Date: 2016-03-29
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Publication No.: US09640514B1Publication Date: 2017-05-02
- Inventor: Wei Lin , Troy L. Graves-Abe , Donald F. Canaperi , Spyridon Skordas , Matthew T. Shoudy , Binglin Miao , Raghuveer R. Patlolla , Sanjay C. Mehta
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Michael Le Strange
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/762 ; H01L23/00 ; H01L25/00

Abstract:
A bonding material stack for wafer-to-wafer bonding is provided. The bonding material stack may include a plurality of layers each including boron and nitrogen. In one embodiment, the plurality of layers may include: a first boron oxynitride layer for adhering to a wafer; a boron nitride layer over the first boron oxynitride layer; a second boron oxynitride layer over the boron nitride layer; and a silicon-containing boron oxynitride layer over the second boron oxynitride layer.
Information query
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