Invention Grant
- Patent Title: Stacked metal oxide semiconductor (MOS) and metal oxide metal (MOM) capacitor architecture
-
Application No.: US14476086Application Date: 2014-09-03
-
Publication No.: US09640532B2Publication Date: 2017-05-02
- Inventor: Timothy Donald Gathman
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Smith Tempel Blaha LLC
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L27/08 ; H01L29/94 ; H01L29/93 ; H03K17/687
Abstract:
A device includes a first stacked capacitor comprising a first MOS capacitance and a first MOM capacitance, the first MOS capacitance coupled to a first node, the first node configured to receive a first bias voltage, and a second stacked capacitor comprising a second MOS capacitance and a second MOM capacitance, the second MOS capacitance coupled to the first node.
Public/Granted literature
- US20150236014A1 STACKED METAL OXIDE SEMICONDUCTOR (MOS) AND METAL OXIDE METAL (MOM) CAPACITOR ARCHITECTURE Public/Granted day:2015-08-20
Information query
IPC分类:
