Invention Grant
- Patent Title: Non-volatile memory devices including vertical NAND channels and methods of forming the same
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Application No.: US14171074Application Date: 2014-02-03
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Publication No.: US09640545B2Publication Date: 2017-05-02
- Inventor: Kwang Soo Seol , Sukpil Kim , Yoondong Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2009-0010546 20090210
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11551 ; G11C16/04 ; H01L27/11519
Abstract:
A non-volatile memory device can include a plurality of immediately adjacent offset vertical NAND channels that are electrically coupled to a single upper select gate line or to a single lower select gate line of the non-volatile memory device.
Public/Granted literature
- US20140145255A1 NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND CHANNELS AND METHODS OF FORMING THE SAME Public/Granted day:2014-05-29
Information query
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