Invention Grant
- Patent Title: Passive device and radio frequency module formed on high resistivity substrate
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Application No.: US15041576Application Date: 2016-02-11
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Publication No.: US09640551B2Publication Date: 2017-05-02
- Inventor: Yong Soo Cho
- Applicant: Dongbu Hitek Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: DONGBU HITEK CO., LTD.
- Current Assignee: DONGBU HITEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Patterson Thuente Pedersen, P.C.
- Priority: KR10-2015-0086365 20150618
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/06 ; H01L49/02 ; H01L29/10 ; H01L29/06 ; H01L23/66

Abstract:
In embodiments, a radio frequency (RF) module includes an RF switching device, an RF active device, a passive device and a control device formed on a high resistivity substrate. The passive device can include a shallow trench device isolation region having a plate shape and formed at a surface portion of the high resistivity substrate, deep trench device isolation regions extending downward from a lower surface of the shallow trench device isolation region so as to define at least one isolated region therebetween, at least one insulating layer formed on the high resistivity substrate, and at least one passive component formed on the insulating layer.
Public/Granted literature
- US20160372483A1 Passive Device and Radio Frequency Module Formed on High Resistivity Substrate Public/Granted day:2016-12-22
Information query
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