Provided is a thin film transistor that has high mobility and excellent stress resistance and is good typically in adaptability to wet etching process. The thin film transistor includes a substrate, and, disposed on the substrate in the following sequence, a gate electrode, a gate insulator film, oxide semiconductor layers, source-drain electrodes, and a passivation film that protects the source-drain electrodes. The oxide semiconductor layers have a first oxide semiconductor layer including In, Ga, Zn, Sn, and O, and a second oxide semiconductor layer including In, Ga, Sn, and O. The second oxide semiconductor layer is disposed on the gate insulator film. The first oxide semiconductor layer is disposed between the second oxide semiconductor layer and the passivation film. The atomic ratios in contents of the individual metal elements to all the metal elements constituting the first and the second oxide semiconductor layers are controlled to predetermined ratios.