Invention Grant
- Patent Title: Low temperature poly-silicon array substrate and forming method thereof
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Application No.: US14733797Application Date: 2015-06-08
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Publication No.: US09640559B2Publication Date: 2017-05-02
- Inventor: Bozhi Liu , Zaiwen Zhu
- Applicant: Xiamen Tianma Micro-Electronics Co., Ltd. , Tianma Micro-Electronics Co., Ltd.
- Applicant Address: CN Xiamen CN Shenzhen
- Assignee: XIAMEN TIANMA MICRO-ELECTRONICS CO., LTD.,TIANMA MICRO-ELECTRONICS CO., LTD.
- Current Assignee: XIAMEN TIANMA MICRO-ELECTRONICS CO., LTD.,TIANMA MICRO-ELECTRONICS CO., LTD.
- Current Assignee Address: CN Xiamen CN Shenzhen
- Agency: Alston & Bird LLP
- Priority: CN201410604206 20141031
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/12 ; H01L29/786

Abstract:
A low temperature poly-silicon (LTPS) array substrate is disclosed. The array substrate includes a first substrate and a stack structure on the first substrate, where the stack structure includes a first conductive layer, and a second conductive layer. The first and second conductive layers are insulated from each other. The array substrate also includes a polysilicon layer above the first and second conductive layers, an interlayer insulating layer above the polysilicon layer, and a source-drain metal layer on the interlayer insulating layer. The source-drain metal layer includes a source and a drain, the source and the drain are electrically connected with the polysilicon layer through a first via, and one of the source and the drain is electrically connected with the first conductive layer through a second via.
Public/Granted literature
- US20160126258A1 LOW TEMPERATURE POLY-SILICON ARRAY SUBSTRATE AND FORMING METHOD THEREOF Public/Granted day:2016-05-05
Information query
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