Low temperature poly-silicon array substrate and forming method thereof
Abstract:
A low temperature poly-silicon (LTPS) array substrate is disclosed. The array substrate includes a first substrate and a stack structure on the first substrate, where the stack structure includes a first conductive layer, and a second conductive layer. The first and second conductive layers are insulated from each other. The array substrate also includes a polysilicon layer above the first and second conductive layers, an interlayer insulating layer above the polysilicon layer, and a source-drain metal layer on the interlayer insulating layer. The source-drain metal layer includes a source and a drain, the source and the drain are electrically connected with the polysilicon layer through a first via, and one of the source and the drain is electrically connected with the first conductive layer through a second via.
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