Invention Grant
- Patent Title: Semiconductor integrated circuit device having vertical channel and method of manufacturing the same
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Application No.: US15217727Application Date: 2016-07-22
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Publication No.: US09640587B2Publication Date: 2017-05-02
- Inventor: Kang Sik Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: I P & T Group LLP
- Priority: KR10-2014-0086098 20140709
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L27/24 ; H01L29/66 ; H01L29/78 ; H01L45/00 ; H01L29/786
Abstract:
A semiconductor integrated circuit device having a vertical channel and a method of manufacturing the same are provided. A plurality of active lines are formed in a semiconductor substrate. A gate electrode having a lower height than each active line is formed on a sidewall of the active line. A first insulating layer having a height lower than that of the active line and higher than that of the gate electrode is buried between active lines, and a silicide layer is formed on an exposed upper surface and a lateral surface of the active line.
Public/Granted literature
- US20160336376A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING VERTICAL CHANNEL AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-11-17
Information query
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