Invention Grant
- Patent Title: Die including a high voltage capacitor
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Application No.: US14637432Application Date: 2015-03-04
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Publication No.: US09640607B2Publication Date: 2017-05-02
- Inventor: Sharon Levin
- Applicant: Tower Semiconductor Ltd.
- Applicant Address: IL Migdal Haemek
- Assignee: TOWER SEMICONDUCTOR LTD.
- Current Assignee: TOWER SEMICONDUCTOR LTD.
- Current Assignee Address: IL Migdal Haemek
- Agency: Reches Patents
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L49/02 ; G06F17/50 ; H01L27/06 ; H01L23/522

Abstract:
According to an embodiment of the invention there may be provided a die that may include a first capacitor layer that comprises (a) a first capacitor conductive plate, and (b) a first capacitor layer dielectric material that partially surrounds the first capacitor conductive plate; a first conductor; an intermediate metal layer that comprises (a) an intermediate metal layer conductor that is made of Copper, and (b) an intermediate metal layer dielectric material that partially surrounds the intermediate metal layer conductor; wherein the first conductor is positioned between a substrate of the die and the intermediate metal layer; a redistribution layer that comprises (a) a redistribution layer conductor that is electrically coupled to an interface pad of the die, (b) a second capacitor conductive plate, and (c) a redistribution layer dielectric material that partially surrounds the redistribution layer conductor and the second capacitor conductive plate; wherein a certain portion of the intermediate metal layer dielectric material is positioned between the first and second capacitor conductive plates; wherein at least the certain portion of the intermediate metal layer dielectric material, the first capacitor conductive plate and the second capacitor conductive plate form a high voltage capacitor; and wherein the intermediate metal layer conductor is configured to supply power to a group of transistors of the die while the first conductor is configured to supply power only to a sub-group of the transistors of the die.
Public/Granted literature
- US20160260796A1 DIE INCLUDING A HIGH VOLTAGE CAPACITOR Public/Granted day:2016-09-08
Information query
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