Invention Grant
- Patent Title: Reliability in mergeable semiconductor devices
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Application No.: US14832139Application Date: 2015-08-21
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Publication No.: US09640635B2Publication Date: 2017-05-02
- Inventor: Zhihong Zhang , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
- Applicant: Zhihong Zhang , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Agent Rajeev Madnawat
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/01 ; H01L21/336 ; H01L29/66 ; H01L29/786 ; H01L21/265 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L21/8234 ; H01L29/36 ; H01L27/088 ; H01L21/761 ; H01L21/762
Abstract:
A method of fabricating a transistor device having a channel of a first conductivity type formed during operation in a body region having a second conductivity type includes forming a first well region of the body region in a semiconductor substrate, performing a first implantation procedure to counter-dope the first well region with dopant of the first conductivity type to define a second well region of the body region, and performing a second implantation procedure to form a source region in the first well region and a drain region in the second well region.
Public/Granted literature
- US20150364576A1 RELIABILITY IN MERGEABLE SEMICONDUCTOR DEVICES Public/Granted day:2015-12-17
Information query
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