Invention Grant
- Patent Title: Semiconductor device with silicide
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Application No.: US14018737Application Date: 2013-09-05
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Publication No.: US09640645B2Publication Date: 2017-05-02
- Inventor: Jean-Pierre Colinge , Kuo-Cheng Ching , Ta-Pen Guo , Carlos H. Diaz
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L29/775
- IPC: H01L29/775 ; H01L29/786 ; B82Y10/00 ; B82Y40/00 ; H01L29/66 ; H01L29/06 ; H01L29/41 ; H01L29/16
Abstract:
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a first silicide region on a first type surface region of the first type region. The first silicide region is separated at least one of a first distance from a first type diffusion region of the first type region or a second distance from the channel region.
Public/Granted literature
- US20150060996A1 SEMICONDUCTOR DEVICE WITH SILICIDE Public/Granted day:2015-03-05
Information query
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