Invention Grant
- Patent Title: Semiconductor devices including epitaxial layers and related methods
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Application No.: US13608350Application Date: 2012-09-10
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Publication No.: US09640652B2Publication Date: 2017-05-02
- Inventor: Brett Adam Hull , Qingchun Zhang
- Applicant: Brett Adam Hull , Qingchun Zhang
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/06 ; H01L29/16 ; H01L29/45
Abstract:
A semiconductor device may include a semiconductor layer having a first conductivity type, a well region of a second conductivity type in the semiconductor layer wherein the first and second conductivity types are different, and a terminal region of the first conductivity type in the well region. An epitaxial semiconductor layer may be on the surface of the semiconductor layer including the well region and the terminal region with the epitaxial semiconductor layer having the first conductivity type across the well and terminal regions. A gate electrode may be on the epitaxial semiconductor layer so that the epitaxial semiconductor layer is between the gate electrode and portions of the well region surrounding the terminal region at the surface of the semiconductor layer.
Public/Granted literature
- US20130009221A1 SEMICONDUCTOR DEVICES INCLUDING EPITAXIAL LAYERS AND RELATED METHODS Public/Granted day:2013-01-10
Information query
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