Invention Grant
- Patent Title: Interdigitated back contact heterojunction photovoltaic device
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Application No.: US13763219Application Date: 2013-02-08
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Publication No.: US09640699B2Publication Date: 2017-05-02
- Inventor: Tze-Chiang Chen , Bahman Hekmatshoartabari , Devendra K. Sadana , Davood Shahrjerdi
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L31/077
- IPC: H01L31/077 ; H01L31/18 ; H01L31/0216 ; H01L31/0224 ; H01L31/068 ; H01L31/0747

Abstract:
A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.
Public/Granted literature
- US20140224307A1 INTERDIGITATED BACK CONTACT HETEROJUNCTION PHOTOVOLTAIC DEVICE Public/Granted day:2014-08-14
Information query
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