In an avalanche photodiode provided with a substrate including a first electrode and a first semiconductor layer, formed of a first conductivity type, which is connected to the first electrode, the configuration is in such a way that, at least an avalanche multiplication layer, a light absorption layer, and a second semiconductor layer having a bandgap that is larger than that of the light absorption layer are layered on the substrate; a second conductivity type conductive region is formed in the second semiconductor layer; and the second conductivity type conductive region is arranged so as to be connected to a second electrode. With the foregoing configuration, an avalanche photodiode having a small dark current and a high long-term reliability can be provided with a simple process.Additionally, the configuration is in such a way that, by removing at least the light absorption layer among the layers which are layered on the peripheral portion, of the substrate, on which the second conductivity type conductive region and the second semiconductor layer around the second conductivity type conductive region are surrounded by that layers, a side face of the light absorption layer is formed. With the configuration, the dark current can be further reduced.