Invention Grant
- Patent Title: Substrate cleaving under controlled stress conditions
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Application No.: US15167291Application Date: 2016-05-27
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Publication No.: US09640711B2Publication Date: 2017-05-02
- Inventor: Francois Henley , Al Lamm , Yi-Lei Chow
- Applicant: Silicon Genesis Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Silicon Genesis Corporation
- Current Assignee: Silicon Genesis Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L31/18 ; H01L21/683 ; H01L21/67 ; H01L21/762 ; H01L21/78 ; H01L31/0392 ; H01L31/068 ; H01L31/0687 ; H01L21/304 ; B26F3/00 ; H01L21/66

Abstract:
A thickness of material may be detached from a substrate along a cleave plane, utilizing a cleaving process controlled by a releasable constraint plate. In some embodiments this constraint plate may comprise a plate that can couple side forces (the “P-plate”) and a thin, softer compliant layer (the “S-layer”) situated between the P-plate and the substrate. In certain embodiments a porous surface within the releasable constraint plate and in contact to the substrate, allows the constraint plate to be secured to the substrate via a first pressure differential. Application of a combination of a second pressure differential within a pre-existing cleaved portion, and a linear force to a side of the releasable constraint plate bound to the substrate, generates loading that results in controlled cleaving along the cleave plane.
Public/Granted literature
- US20160276522A1 SUBSTRATE CLEAVING UNDER CONTROLLED STRESS CONDITIONS Public/Granted day:2016-09-22
Information query
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