Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing a semiconductor structure
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Application No.: US14762660Application Date: 2014-01-21
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Publication No.: US09640722B2Publication Date: 2017-05-02
- Inventor: David Vaufrey
- Applicant: Commissariat a l'energie atomique et aux energies alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1350540 20130122
- International Application: PCT/EP2014/051067 WO 20140121
- International Announcement: WO2014/114606 WO 20140731
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L33/24 ; H01L33/08 ; H01L33/14 ; H01L33/00 ; H01L33/06

Abstract:
A semiconducting structure configured to emit electromagnetic radiation. The structure includes a first zone and a second zone with first and second types of conductivities respectively opposite to each other, the first and second zones being connected to each other to form a semiconducting junction. The first zone includes at least a first and a second part, the first and the second parts being separated from each other by an intermediate layer, as a spreading layer, extending approximately parallel to a junction plane along a major part of the junction. The spreading layer can cause spreading of carriers in the plane of the spreading layer.
Public/Granted literature
- US20150364648A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE Public/Granted day:2015-12-17
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