Invention Grant
- Patent Title: Silicon nanocrystal light emitting diode and fabricating method thereof
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Application No.: US15013803Application Date: 2016-02-02
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Publication No.: US09640736B2Publication Date: 2017-05-02
- Inventor: Chul Huh , Bong Kyu Kim , Chang Geun Ahn
- Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2015-0018695 20150206
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/00 ; H01L33/50 ; H01L33/26
Abstract:
Disclosed is a silicon nano crystal light emitting diode, including: a photoelectric conversion layer formed of a silicon nitride layer including a silicon nano crystal; an electron injection layer formed on the photoelectric conversion layer; and a hole injection layer, which faces the electron injection layer with the photoelectric conversion layer interposed therebetween, has an energy band gap higher than that of the photoelectric conversion layer, and has a refractive index lower than that of a silicon thin film.
Public/Granted literature
- US20160233369A1 SILICON NANOCRYSTAL LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF Public/Granted day:2016-08-11
Information query
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