Invention Grant
- Patent Title: Method of manufacturing optical semiconductor element
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Application No.: US15223645Application Date: 2016-07-29
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Publication No.: US09640944B2Publication Date: 2017-05-02
- Inventor: Naoki Jogan , Jun Sakurai , Akemi Murakami , Takashi Kondo , Kazutaka Takeda , Junichiro Hayakawa
- Applicant: FUJI XEROX CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: FUJI XEROX CO., LTD.
- Current Assignee: FUJI XEROX CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2015-176895 20150908
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01S5/026 ; H01L31/0224 ; H01L31/02 ; H01L31/0304 ; H01L31/0216 ; H01S5/02 ; H01S5/042 ; H01S5/34 ; H01S5/343 ; H01L31/075

Abstract:
A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.
Public/Granted literature
- US20170070026A1 METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR ELEMENT Public/Granted day:2017-03-09
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