Invention Grant
- Patent Title: Matching segment circuit to which radio frequency is applied and radio frequency integrated devices using the matching segment circuit
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Application No.: US14605044Application Date: 2015-01-26
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Publication No.: US09641149B2Publication Date: 2017-05-02
- Inventor: Duck Hwan Kim , In Sang Song , Chul Soo Kim , Young Il Kim , Jea Shik Shin
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2010-0111045 20101109
- Main IPC: H03H7/38
- IPC: H03H7/38 ; H03H9/54

Abstract:
Provided are a matching segment circuit, to which a radio frequency (RF) is applied, and an RF integrated device using the matching segment circuit. The matching segment circuit to which an RF is applied may include an input end connected to a first RF device, a parallel segment having a first capacitor and a first inductor connected in parallel, a second inductor connected to the parallel segment in series, and an output end connected to a second RF device. The first capacitor, the first inductor, and the second inductor may be configured so that an impedance of the first RF device and an impedance of the second RF device may match.
Public/Granted literature
Information query