Invention Grant
- Patent Title: Solid-state image sensing device with increased dynamic range
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Application No.: US14517807Application Date: 2014-10-18
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Publication No.: US09641779B2Publication Date: 2017-05-02
- Inventor: Yasutoshi Aibara , Fumihide Murao
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2013-217172 20131018
- Main IPC: H04N5/3745
- IPC: H04N5/3745 ; H04N5/351 ; H04N5/378

Abstract:
A CMOS image sensor used as a solid-state image sensing device includes a pixel circuit for outputting a voltage of a level corresponding to the illuminance, and an A/D converter for converting an output voltage of the pixel circuit into a digital signal. The resolution on the low illuminance side is higher than the resolution on the high illuminance side in the A/D converter. Thus, the dynamic range can be increased and the operation speed can be increased, compared to the case in which the resolution is constant independent of the illuminance.
Public/Granted literature
- US20150109506A1 SOLID-STATE IMAGE SENSING DEVICE Public/Granted day:2015-04-23
Information query
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