Invention Grant
- Patent Title: Evaporation method and film deposition method
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Application No.: US13913981Application Date: 2013-06-10
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Publication No.: US09644264B2Publication Date: 2017-05-09
- Inventor: Masayuki Toda , Masaki Kusuhara , Masaru Umeda , Mitsuru Fukagawa
- Applicant: KABUSHIKI KAISHA WATANABE SHOKO , Masayuki Toda
- Applicant Address: JP Tokyo JP Yamagata
- Assignee: KABUSHIKI KAISHA WATANABE SHOKO,Masayuki Toda
- Current Assignee: KABUSHIKI KAISHA WATANABE SHOKO,Masayuki Toda
- Current Assignee Address: JP Tokyo JP Yamagata
- Agency: Young & Thompson
- Priority: JP2007-136872 20070523
- Main IPC: C23C16/40
- IPC: C23C16/40 ; C23C16/448

Abstract:
Because an evaporating apparatus for use in an MOCVD film deposition system has a structure in which a plurality of gas passages brings in a gas from the upper direction, the apparatus has a difficulty to position a jet nozzle, and the apparatus is incapable of accurately controlling the pressure and flow rate of a carrier gas mixed with a raw material solution to be issued into an evaporating unit, and it is thus difficult to highly accurately control the composition of MOCVD films. A plurality of gas passages is arranged on a flat, disk-shaped plate. With this configuration, the accurate positioning of the jet nozzle can be made easier, and the composition of MOCVD films can be controlled highly accurately.
Public/Granted literature
- US20130273249A1 EVAPORATION METHOD AND FILM DEPOSITION METHOD Public/Granted day:2013-10-17
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