Invention Grant
- Patent Title: Etching solution for copper or a compound comprised mainly of copper
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Application No.: US14130779Application Date: 2012-06-28
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Publication No.: US09644274B2Publication Date: 2017-05-09
- Inventor: Satoshi Tamai , Kunio Yube , Satoshi Okabe
- Applicant: Satoshi Tamai , Kunio Yube , Satoshi Okabe
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Current Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-148542 20110704
- International Application: PCT/JP2012/066533 WO 20120628
- International Announcement: WO2013/005631 WO 20130110
- Main IPC: C03C15/00
- IPC: C03C15/00 ; C23F1/18 ; C23F1/26 ; H01L21/3213 ; C23F1/44 ; C09K13/04 ; H05K3/06 ; C23F1/16
Abstract:
The present invention relates to an etching solution for copper or a compound comprised mainly of copper, wherein the etching solution contains (A) a maleic acid ion source and (B) a copper ion source, and an etching method using the etching solution.
Public/Granted literature
- US20140131615A1 ETCHING SOLUTION FOR COPPER OR A COMPOUND COMPRISED MAINLY OF COPPER Public/Granted day:2014-05-15
Information query
