Invention Grant
- Patent Title: Retention-drift-history-based non-volatile memory read threshold optimization
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Application No.: US14170008Application Date: 2014-01-31
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Publication No.: US09645177B2Publication Date: 2017-05-09
- Inventor: Earl T. Cohen , Hao Zhong
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Taylor English Duma LLP
- Main IPC: G01R19/00
- IPC: G01R19/00 ; G11C16/04 ; G11C16/26 ; G11C16/34 ; G11C29/02 ; G11C7/14

Abstract:
An SSD controller dynamically adjusts read thresholds in an NVM to reduce errors due to device threshold voltage distribution shifts, thus improving performance, reliability, and/or cost of a storage sub-system, such as an SSD. A retention drift clock uses one or more reference pages (or ECC units or blocks) on one or more NVM die as read threshold over time/temperature references, and uses a function of those values as a measure of drift (over time/temperature). At some initial time, the one or more reference pages are programmed and an initial read threshold is measured for each of the one or more reference pages. In some embodiments, read threshold values are averaged among one or more of: all references pages on the same die; and all reference pages in the same one or more die in an I/O device.
Public/Granted literature
- US20140229131A1 RETENTION-DRIFT-HISTORY-BASED NON-VOLATILE MEMORY READ THRESHOLD OPTIMIZATION Public/Granted day:2014-08-14
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