Invention Grant
- Patent Title: Magnetic field sensors and sensng circuits
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Application No.: US13722715Application Date: 2012-12-20
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Publication No.: US09645204B2Publication Date: 2017-05-09
- Inventor: Young-Shying Chen , Cheng-Tyng Yen
- Applicant: Young-Shying Chen , Cheng-Tyng Yen
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: G01R33/09
- IPC: G01R33/09

Abstract:
A magnetic sensor for sensing an external magnetic field includes first and second electrodes and first and second magnetic tunneling junctions. The first and second electrodes are disposed over a substrate; and the first and second magnetic tunneling junctions are conductively disposed between the first and second electrodes and connected in parallel between the first and second electrodes. The first and second magnetic tunneling junctions are arranged along a first easy axis of the magnetic sensor. The first magnetic tunneling junction includes a first pinned magnetization and a first free magnetization, and the second magnetic tunneling junction includes a second pinned magnetization and a second free magnetization. The first free magnetization and the second free magnetization are arranged substantially in parallel to the first easy axis and in substantially opposite directions.
Public/Granted literature
- US20140176132A1 MAGNETIC FIELD SENSORS AND SENSING CIRCUITS Public/Granted day:2014-06-26
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