Invention Grant
- Patent Title: Capacitance reduction for pillar structured devices
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Application No.: US14555463Application Date: 2014-11-26
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Publication No.: US09645262B2Publication Date: 2017-05-09
- Inventor: Qinghui Shao , Adam Conway , Rebecca J. Nikolic , Lars Voss , Ishwara B. Bhat , Sara E. Harrison
- Applicant: Lawrence Livermore National Security, LLC
- Applicant Address: US CA Livermore US NY Clifton Park
- Assignee: Lawrence Livermore National Security, LLC,Ishwara B. Bhat
- Current Assignee: Lawrence Livermore National Security, LLC,Ishwara B. Bhat
- Current Assignee Address: US CA Livermore US NY Clifton Park
- Agency: Zilka Kotab
- Main IPC: G01T3/00
- IPC: G01T3/00 ; G01T3/08 ; H01L31/117

Abstract:
In one embodiment, an apparatus includes: a first layer including a n+ dopant or p+ dopant; an intrinsic layer formed above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, cavity regions being defined between the pillars; and a second layer deposited on a periphery of the pillars thereby forming coated pillars, the second layer being substantially absent on the planar portion of the intrinsic layer between the coated pillars. The second layer includes an n+ dopant when the first layer includes a p+ dopant. The second layer includes a p+ dopant when the first layer includes an n+ dopant. The apparatus includes a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer. In additional embodiments, an upper portion of each of the pillars includes a same type of dopant as the second layer.
Public/Granted literature
- US20160356901A1 CAPACITANCE REDUCTION FOR PILLAR STRUCTURED DEVICES Public/Granted day:2016-12-08
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