Invention Grant
- Patent Title: Electrooptical device, method of manufacturing electrooptical device, and electronic apparatus
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Application No.: US14762736Application Date: 2014-01-10
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Publication No.: US09645458B2Publication Date: 2017-05-09
- Inventor: Masashi Nakagawa
- Applicant: Seiko Epson Corporation
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: ALG Intellectual Property, LLC
- Priority: JP2013-009014 20130122
- International Application: PCT/JP2014/000095 WO 20140110
- International Announcement: WO2014/115499 WO 20140731
- Main IPC: G02F1/00
- IPC: G02F1/00 ; G02F1/1362 ; G02F1/1368 ; H01L27/12 ; G02F1/1333

Abstract:
The liquid crystal device includes a first base material 10a, a TFT 30 that is disposed on the first base material 10a, a capacitive element 16 which is connected to the TFT 30 and in which an insulating film is interposed between a pair of electrodes, a first interconnection 16a1 that is electrically connected to one electrode of the pair of electrodes, a second interconnection 16c1 that is electrically connected to the other electrode of the pair of electrodes, a contact hole CNT71 that electrically connects the first interconnection 16a1 and a pixel electrode 27, and a contact hole CNT72 that is disposed on the second interconnection 16c1. The contact holes CNT71 and CNT72 are provided in a pixel insulating layer 11e that is disposed between the pixel electrode 27 and the first interconnection 16a1 and the second interconnection 16c1.
Public/Granted literature
- US20150362805A1 ELECTROOPTICAL DEVICE, METHOD OF MANUFACTURING ELECTROOPTICAL DEVICE, AND ELECTRONIC APPARATUS Public/Granted day:2015-12-17
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