Invention Grant
- Patent Title: Halftone phase shift photomask blank and making method
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Application No.: US14816637Application Date: 2015-08-03
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Publication No.: US09645485B2Publication Date: 2017-05-09
- Inventor: Takuro Kosaka , Yukio Inazuki , Hideo Kaneko , Toyohisa Sakurada
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2014-158791 20140804; JP2015-128725 20150626
- Main IPC: G03F1/32
- IPC: G03F1/32 ; G03F1/26 ; G03F1/60

Abstract:
A halftone phase shift photomask blank comprising a transparent substrate and a halftone phase shift film consisting of silicon, nitrogen and optional oxygen, and providing a phase shift of 150°-200° relative to light of wavelength up to 200 nm. The phase shift film includes at least one layer meeting the formula: 2×O/Si+3×N/Si≧3.5 wherein Si is a silicon content (at %), N is a nitrogen content (at %), and O is an oxygen content (at %). The phase shift film exhibits satisfactory in-plane uniformity of transmittance.
Public/Granted literature
- US20160033858A1 HALFTONE PHASE SHIFT PHOTOMASK BLANK AND MAKING METHOD Public/Granted day:2016-02-04
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