Invention Grant
- Patent Title: Differential writing for life extension of portions of a memory device
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Application No.: US14404002Application Date: 2014-04-30
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Publication No.: US09646699B2Publication Date: 2017-05-09
- Inventor: Hyun Oh Oh , Jin Sam Kwak , Ju Hyung Son
- Applicant: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Applicant Address: US DE Wilmington
- Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Current Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Current Assignee Address: US DE Wilmington
- Agency: Amin, Turocy & Watson, LLP
- International Application: PCT/US2014/036085 WO 20140430
- International Announcement: WO2015/167509 WO 20151105
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G06F11/10 ; G11C16/34 ; G11C29/50 ; G11C29/52 ; G11C16/26 ; G11C11/56

Abstract:
Technologies are generally described that relate to differential writing for life extension of portions of non-volatile memory that have a likelihood of error that satisfies a defined condition. An example method may include determining that at least two components of a memory device satisfy a defined condition; writing to a first component of the at least two components with first data having a first representation. The method may also include writing to a second component of the at least two components with second data having a second representation different from the first representation, wherein the second data comprises at least a portion that is bit inverted relative to the first data.
Public/Granted literature
- US20160267986A1 DIFFERENTIAL WRITING FOR LIFE EXTENSION OF PORTIONS OF A MEMORY DEVICE Public/Granted day:2016-09-15
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