Invention Grant
- Patent Title: Method of making dielectric capacitors with increased dielectric breakdown strength
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Application No.: US13523335Application Date: 2012-06-14
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Publication No.: US09646766B2Publication Date: 2017-05-09
- Inventor: Beihai Ma , Uthamalingam Balachandran , Shanshan Liu
- Applicant: Beihai Ma , Uthamalingam Balachandran , Shanshan Liu
- Applicant Address: US IL Chicago
- Assignee: UChicago Argonne, LLC
- Current Assignee: UChicago Argonne, LLC
- Current Assignee Address: US IL Chicago
- Agency: Cherskov Flaynik & Gurda, LLC
- Main IPC: H01G4/008
- IPC: H01G4/008 ; H01G4/10 ; H01G4/12 ; H01G4/30

Abstract:
The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.
Public/Granted literature
- US20130335882A1 METHOD OF MAKING DIELECTRIC CAPACITORS WITH INCREASED DIELECTRIC BREAKDOWN STRENGTH Public/Granted day:2013-12-19
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