Invention Grant
- Patent Title: Plasma electrode device and method for manufacturing the same
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Application No.: US14660126Application Date: 2015-03-17
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Publication No.: US09646806B2Publication Date: 2017-05-09
- Inventor: Jaesoo Jang , Bongjo Sung
- Applicant: LG ELECTRONICS INC.
- Applicant Address: KR Seoul
- Assignee: LG ELECTRONICS INC.
- Current Assignee: LG ELECTRONICS INC.
- Current Assignee Address: KR Seoul
- Agency: KED & Associates LLP
- Priority: KR10-2014-0034441 20140325
- Main IPC: H01J37/32
- IPC: H01J37/32 ; A61L2/08 ; B01J19/12 ; A61L9/22 ; B01D53/32 ; F24F3/16 ; B01D53/86

Abstract:
Provided are a plasma electrode device and a manufacturing method thereof. The plasma electrode device includes a first substrate including a first substrate main body having a first flow hole through which air flows and a first discharge electrode disposed on one surface of the first substrate main body and a second substrate disposed on one side of the first substrate, the second substrate including a second flow hole through which air flows and a second discharge electrode acting with the first substrate. The first substrate main body includes a ground electrode acting with the first or second discharge electrode to perform plasma discharge and a first insulator coupled to the ground electrode.
Public/Granted literature
- US20150279622A1 PLASMA ELECTRODE DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-10-01
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