Invention Grant
- Patent Title: Method of manufacturing a semiconductor device including removing a relief layer from back surface of semiconductor chip
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Application No.: US14715928Application Date: 2015-05-19
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Publication No.: US09646856B2Publication Date: 2017-05-09
- Inventor: Thorsten Meyer , Klaus Reingruber , David O'Sullivan
- Applicant: Intel Mobile Communications GmbH
- Applicant Address: DE Neubiberg
- Assignee: Intel Deutschland GmbH
- Current Assignee: Intel Deutschland GmbH
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/304 ; H01L21/56 ; H01L23/31 ; H01L23/00 ; H01L21/311 ; H01L21/683 ; H01L21/78
Abstract:
A method of manufacturing a device includes providing a semiconductor chip having a first face and a second face opposite to the first face with a contact pad arranged on the first face. The semiconductor chip is placed on a carrier with the first face facing the carrier. The semiconductor chip is encapsulated with an encapsulation material. The carrier is removed and the semiconductor material is removed from the second face of the first semiconductor chip without removing encapsulation material at the same time.
Public/Granted literature
- US20150262844A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING GRINDING SETS Public/Granted day:2015-09-17
Information query
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