Invention Grant
- Patent Title: Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
-
Application No.: US14614625Application Date: 2015-02-05
-
Publication No.: US09646862B2Publication Date: 2017-05-09
- Inventor: Katsuyoshi Hamano , Atsushi Umekawa , Takuya Joda , Akinori Ishii , Masahisa Okuno
- Applicant: Hitachi Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Edell, Shapiro & Finnan LLC
- Priority: JP2012-195756 20120906; JP2012-207603 20120920; JP2012-207748 20120921
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/67 ; H01L21/687 ; H01L21/268
Abstract:
Heating within a plane of a substrate may be uniform while a thermal budget is decreased. A substrate processing apparatus includes a process chamber configured to accommodate a substrate; a substrate mounting unit installed in the process chamber and configured to have the substrate placed thereon; an electromagnetic wave supply unit configured to supply an electromagnetic wave to the substrate placed on the substrate mounting unit; and a choke groove formed on a side surface of the substrate mounting unit.
Public/Granted literature
Information query
IPC分类:
