Invention Grant
- Patent Title: Semiconductor device having solder joint and method of forming the same
-
Application No.: US14686775Application Date: 2015-04-14
-
Publication No.: US09646945B2Publication Date: 2017-05-09
- Inventor: Soon-Bum Kim , Tae-Eun Kim , Eun-Hye Park
- Applicant: Soon-Bum Kim , Tae-Eun Kim , Eun-Hye Park
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2014-0095964 20140728
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00
Abstract:
Provided is a semiconductor device having a high-reliability solder joint. The semiconductor device includes a high-temperature solder formed on a conductive pad. A low-temperature solder having a lower melting point than the high-temperature solder is formed on the high-temperature solder. A barrier layer is formed between the high-temperature solder and the low-temperature solder. An Sn content of the high-temperature solder is higher than that of the low-temperature solder.
Public/Granted literature
- US20160027751A1 SEMICONDUCTOR DEVICE HAVING SOLDER JOINT AND METHOD OF FORMING THE SAME Public/Granted day:2016-01-28
Information query
IPC分类:
